NTJD4401N, NVJD4401N
TYPICAL PERFORMANCE CURVES (T J = 25 ° C unless otherwise noted)
5
4
Q G(TOT)
V GS
0.7
0.6
0.5
V GS = 0 V
3
0.4
2
Q GS
Q GD
0.3
0.2
1
0
0
0.2
0.4
0.6
0.8
1
I D = 0.63 A
T J = 25 ° C
1.2
1.4
0.1
0
0
0.2
T J = 150 ° C
0.4
0.6
T J = 25 ° C
0.8
1
Q g , TOTAL GATE CHARGE (nC)
Figure 7. Gate ? to ? Source and
Drain ? to ? Source Voltage vs. Total Charge
ORDERING INFORMATION
V SD , SOURCE ? TO ? DRAIN VOLTAGE (VOLTS)
Figure 8. Diode Forward Voltage vs. Current
Device
NTJD4401NT1G
NVJD4401NT1G
Package
SC ? 88
(Pb ? Free)
SC ? 88
(Pb ? Free)
Shipping ?
3000 / Tape & Reel
3000 / Tape & Reel
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
4
相关PDF资料
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相关代理商/技术参数
NTJD4401NT2 功能描述:MOSFET 20V Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTJD4401NT2G 功能描述:MOSFET 20V Dual N-Channel ESD Protection RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTJD4401NT4 功能描述:MOSFET 20V Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTJD4401NT4G 功能描述:MOSFET 20V Dual N-Channel ESD Protection RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTJD5121N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 60 V, 295 mA, Dual N-Channel with ESD Protection, SC-88
NTJD5121NT1G 功能描述:MOSFET NFET SC88D 60V 295mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTJD5121NT2G 功能描述:MOSFET NFET SC88D 60V 295mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTJS3151P 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Trench Power MOSFET 12 V, 3.3 A, Single P−Channel, ESD Protected SC−88